Part Number Hot Search : 
VHC9541 A1530BA1 C1906 PDAA3 HCGF5A 1235F 148CV P20D100
Product Description
Full Text Search
 

To Download FZT869 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR
ISSUE 2 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36m at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts PARTMARKING DETAILS FZT869
FZT869
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 60 25 6 20 7 3 -55 to +150 UNIT V V V A A W C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum
3 - 271
FZT869
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1k IEBO VCE(sat) 35 67 168 MIN. 60 60 25 6 TYP. 120 120 35 8 50 1 50 1 10 50 110 215 350 1.2 1.13 300 300 200 40 450 450 300 100 100 70 60 680 MHz pF ns ns MAX. UNIT V V V V nA nA nA mV mV mV mV V V CONDITIONS. IC=100A IC=1A, RB 1k IC=10mA* IE=100A VCB=50V VCB=50V, Tamb=100C VCB=50V VCB=50V, Tamb=100C VEB=6V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=6.5A, IB=150mA* IC=6.5A, IB=300mA IC=6.5A, VCE=1V* IC=10mA, VCE=1V IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=2V* IC=100mA, VCE=10V f=50MHz VCB=10V, f=1MHz* IC=1A, IB1=100mA IB2=100mA, VCC=10V
A A
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
VBE(sat) VBE(on) hFE
Transition Frequency Output Capacitance Switching Times
fT Cobo ton toff
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device
3 - 272


▲Up To Search▲   

 
Price & Availability of FZT869

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X